From f6670083e6c4d355866293ffe547b5ce6ff0f8f9 Mon Sep 17 00:00:00 2001 From: luojunlin Date: Thu, 24 Sep 2026 17:42:39 +0800 Subject: [PATCH 1/2] fix: update dual-voltage GPIO max supply from 1.98/3.63 to 1.98/3.465 (en+zh k3_ds) --- en/key_stone/k3/k3_docs/k3_ds.md | 12 ++++++------ zh/key_stone/k3/k3_docs/k3_ds.md | 12 ++++++------ 2 files changed, 12 insertions(+), 12 deletions(-) diff --git a/en/key_stone/k3/k3_docs/k3_ds.md b/en/key_stone/k3/k3_docs/k3_ds.md index 933e1c9..a7173e4 100644 --- a/en/key_stone/k3/k3_docs/k3_ds.md +++ b/en/key_stone/k3/k3_docs/k3_ds.md @@ -2554,12 +2554,12 @@ The following table describes the recommended operating conditions. | | VCC18_GPIO4 | -0.3V | 1.98V | | | VCC18_GPIO5 | -0.3V | 1.98V | | | VCC18_PMIC | -0.3V | 1.98V | -| | VCC1833_GPIO1 | -0.3V | 1.98V/3.63V | -| | VCC1833_GPIO2 | -0.3V | 1.98V/3.63V | -| | VCC1833_GPIO4 | -0.3V | 1.98V/3.63V | -| | VCC1833_GPIO5 | -0.3V | 1.98V/3.63V | -| | VCC1833_QSPI | -0.3V | 1.98V/3.63V | -| | VCC1833_MMC1 | -0.3V | 1.98V/3.63V | +| | VCC1833_GPIO1 | -0.3V | 1.98V/3.465V | +| | VCC1833_GPIO2 | -0.3V | 1.98V/3.465V | +| | VCC1833_GPIO4 | -0.3V | 1.98V/3.465V | +| | VCC1833_GPIO5 | -0.3V | 1.98V/3.465V | +| | VCC1833_QSPI | -0.3V | 1.98V/3.465V | +| | VCC1833_MMC1 | -0.3V | 1.98V/3.465V | | **OSC** | AVDD08_OSC | -0.3V | 0.88V | | | AVDD18_OSC | -0.3V | 1.96V | | **PICE PHY0** | AVDD08_PCIeA | -0.3V | 0.88V | diff --git a/zh/key_stone/k3/k3_docs/k3_ds.md b/zh/key_stone/k3/k3_docs/k3_ds.md index 04b5d69..84c2aa9 100644 --- a/zh/key_stone/k3/k3_docs/k3_ds.md +++ b/zh/key_stone/k3/k3_docs/k3_ds.md @@ -2608,12 +2608,12 @@ K3 的 I/O 引脚支持 **功能 0 至 功能 7（Function 0–7）** 的信号 | | VCC18_GPIO4 | -0.3V | 1.98V | | | VCC18_GPIO5 | -0.3V | 1.98V | | | VCC18_PMIC | -0.3V | 1.98V | -| | VCC1833_GPIO1 | -0.3V | 1.98V/3.63V | -| | VCC1833_GPIO2 | -0.3V | 1.98V/3.63V | -| | VCC1833_GPIO4 | -0.3V | 1.98V/3.63V | -| | VCC1833_GPIO5 | -0.3V | 1.98V/3.63V | -| | VCC1833_QSPI | -0.3V | 1.98V/3.63V | -| | VCC1833_MMC1 | -0.3V | 1.98V/3.63V | +| | VCC1833_GPIO1 | -0.3V | 1.98V/3.465V | +| | VCC1833_GPIO2 | -0.3V | 1.98V/3.465V | +| | VCC1833_GPIO4 | -0.3V | 1.98V/3.465V | +| | VCC1833_GPIO5 | -0.3V | 1.98V/3.465V | +| | VCC1833_QSPI | -0.3V | 1.98V/3.465V | +| | VCC1833_MMC1 | -0.3V | 1.98V/3.465V | | **OSC** | AVDD08_OSC | -0.3V | 0.88V | | | AVDD18_OSC | -0.3V | 1.96V | | **PICE PHY0** | AVDD08_PCIeA | -0.3V | 0.88V | From ddebf84b6b37640a8d31e2a0354be7099d635dfe Mon Sep 17 00:00:00 2001 From: luojunlin Date: Mon, 28 Sep 2026 10:06:56 +0800 Subject: [PATCH 2/2] fix: resolve doc consistency conflicts across K1/K3/P1/P1S/P3 MIME-Version: 1.0 Content-Type: text/plain; charset=UTF-8 Content-Transfer-Encoding: 8bit Datasheet and brief conflicts: - P1S ds+brief: LDO count 12 -> 5 (copy-paste from P1 which has 12) - P1S brief: EN LDO bullet 5 low-noise -> 4 (1 always-on + 4 = 5 total) - P1S brief: VIN min 2.6V -> 2.7V to match datasheet (en+zh) - K3 ds: CAN -> CAN-FD in summary line (en+zh) - K3 en ds: add VP8 to codec summary line Structure: - K1 usermanual: 8.CPU_System sidebar_position 8 -> 9 (duplicate with ch7) Terminology: - Replace U+2103 and U+02DA with canonical °C across 11 files - P1S: IIC -> I2C in overview and function text --- en/key_stone/k1/k1_docs/k1_ds.md | 4 +- .../4.Electrical_Characteristics.md | 4 +- .../k1_usermanual/7.Interrupt_Assignments.md | 2 +- .../k1/k1_docs/k1_usermanual/8.CPU_System.md | 2 +- en/key_stone/k1/k1_sw/k1_sw_faq.md | 4 +- en/key_stone/k3/k3_hw/k3_hw_design_guide.md | 52 ++++----- en/power_stone/p1/p1_docs/p1_ds.md | 4 +- en/power_stone/p1s/p1s_docs/p1s_ds.md | 110 +++++++++--------- en/power_stone/p1s/p1s_docs/root_overview.md | 8 +- en/power_stone/p3/p3_docs/p3_ds.md | 62 +++++----- zh/key_stone/k1/k1_docs/root_overview.md | 2 +- zh/key_stone/k1/k1_hw/avl_veri_sop.md | 2 +- zh/key_stone/k1/k1_sw/k1_sw_faq.md | 2 +- zh/key_stone/k3/k3_docs/k3_ds.md | 2 +- zh/key_stone/k3/k3_hw/k3_hw_design_guide.md | 52 ++++----- zh/power_stone/p1/p1_docs/p1_ds.md | 26 ++--- zh/power_stone/p1s/p1s_docs/p1s_ds.md | 108 ++++++++--------- zh/power_stone/p1s/p1s_docs/root_overview.md | 6 +- zh/power_stone/p3/p3_docs/p3_ds.md | 70 +++++------ 19 files changed, 261 insertions(+), 261 deletions(-) diff --git a/en/key_stone/k1/k1_docs/k1_ds.md b/en/key_stone/k1/k1_docs/k1_ds.md index 7e8328a..999f72f 100644 --- a/en/key_stone/k1/k1_docs/k1_ds.md +++ b/en/key_stone/k1/k1_docs/k1_ds.md @@ -3756,8 +3756,8 @@ Instead, the input thresholds of Schmitt Trigger Mode of I/O PADs are tabled bel | Item | Symbol | Min | Max | Unit | |-----------------------------------|--------|------|------|------| | Operating Temperature
(Industrial Standard) | Ta | -40 | +85 | °C | -| Junction Temperature | Tj | N/A | 125 | ℃ | -| Storage Temperature | Tstg | -40 | 125 | ℃ | +| Junction Temperature | Tj | N/A | 125 | °C | +| Storage Temperature | Tstg | -40 | 125 | °C | ### 5.3 Pin Max Currents diff --git a/en/key_stone/k1/k1_docs/k1_usermanual/4.Electrical_Characteristics.md b/en/key_stone/k1/k1_docs/k1_usermanual/4.Electrical_Characteristics.md index 96cd3c4..6b9ac7e 100644 --- a/en/key_stone/k1/k1_docs/k1_usermanual/4.Electrical_Characteristics.md +++ b/en/key_stone/k1/k1_docs/k1_usermanual/4.Electrical_Characteristics.md @@ -113,8 +113,8 @@ sidebar_position: 5 | Item | Symbol | Min | Max | Unit | |-----------------------------------|--------|------|------|------| | Operating Temperature
(Industrial Standard) | Ta | -40 | +85 | °C | -| Junction Temperature | Tj | N/A | 125 | ℃ | -| Storage Temperature | Tstg | -40 | 125 | ℃ | +| Junction Temperature | Tj | N/A | 125 | °C | +| Storage Temperature | Tstg | -40 | 125 | °C | ## 4.3 Pin Max Currents diff --git a/en/key_stone/k1/k1_docs/k1_usermanual/7.Interrupt_Assignments.md b/en/key_stone/k1/k1_docs/k1_usermanual/7.Interrupt_Assignments.md index 76bf8f9..725510f 100644 --- a/en/key_stone/k1/k1_docs/k1_usermanual/7.Interrupt_Assignments.md +++ b/en/key_stone/k1/k1_docs/k1_usermanual/7.Interrupt_Assignments.md @@ -1,4 +1,4 @@ -sidebar_position: 7 +sidebar_position: 8 # 7. Interrupt Assignments diff --git a/en/key_stone/k1/k1_docs/k1_usermanual/8.CPU_System.md b/en/key_stone/k1/k1_docs/k1_usermanual/8.CPU_System.md index d890b3e..d2e1c35 100644 --- a/en/key_stone/k1/k1_docs/k1_usermanual/8.CPU_System.md +++ b/en/key_stone/k1/k1_docs/k1_usermanual/8.CPU_System.md @@ -1,5 +1,5 @@ --- -sidebar_position: 8 +sidebar_position: 9 --- # 8. CPU System diff --git a/en/key_stone/k1/k1_sw/k1_sw_faq.md b/en/key_stone/k1/k1_sw/k1_sw_faq.md index daae8ab..b8148c3 100644 --- a/en/key_stone/k1/k1_sw/k1_sw_faq.md +++ b/en/key_stone/k1/k1_sw/k1_sw_faq.md @@ -974,7 +974,7 @@ TBD open the thermal control related device tree file `arch/riscv/boot/dts/spacemit/k1-x_thermal_cooling.dtsi`. - **Modify thermal control settings:** In the file, locate the thermal control nodes such as `cls0_trip4` and `cls1_trip4`, and set the `temperature` and `hysteresis` parameters. These attributes define the temperature threshold and hysteresis value for triggering shutdown. - As shown in the following dts configuration, set 115℃ to trigger shutdown to protect the chip: + As shown in the following dts configuration, set 115°C to trigger shutdown to protect the chip: ```c //arch/riscv/boot/dts/spacemit/k1-x_thermal_cooling.dtsi @@ -995,7 +995,7 @@ TBD - **Step 2:** Flash the new device tree (dts) to the device and reboot the system. - **Step 3: Verify the changes:** Monitor system temperature with appropriate tools, and ensure the thermal control settings work as expected. **Note.** Changing thermal control settings may affect system stability and hardware lifespan, so please be cautious. - It is recommended to read relevant documents or seek professional guidance before making changes (the recommended maximum temperature is 115℃). + It is recommended to read relevant documents or seek professional guidance before making changes (the recommended maximum temperature is 115°C). To disable thermal control, you can turn off the kernel compilation configuration CONFIG\_THERMAL, but this is not recommended. 10. **How to Pull Up GPIO via Command Line?** diff --git a/en/key_stone/k3/k3_hw/k3_hw_design_guide.md b/en/key_stone/k3/k3_hw/k3_hw_design_guide.md index 2521fe7..4855f6d 100644 --- a/en/key_stone/k3/k3_hw/k3_hw_design_guide.md +++ b/en/key_stone/k3/k3_hw/k3_hw_design_guide.md @@ -566,9 +566,9 @@ The K3 provides 17 UART interfaces, divided into two categories: X100 UART and R - UART1 can be used in the secure domain - RCPU UART: 6 ports -#### 1.4.3 IIC +#### 1.4.3 I²C -The K3 provides 11 IIC interfaces. +The K3 provides 11 I²C interfaces. - 9 x general-purpose I2C interfaces. - 1 × PWR I2C and 1 × RCPU PWR I2C, used for power IC configuration and control @@ -975,7 +975,7 @@ PCB insertion loss requirement: < 2 dB @ 2.7 GHz ### 3.1 Thermal Resistance Simulation Results -| Package | Jc (℃/W) | Jb (℃/W) | +| Package | Jc (°C/W) | Jb (°C/W) | | --- | --- | --- | | Thermal resistance | 0.17 | | @@ -989,7 +989,7 @@ Thermal control strategy: step_wise (temperature rise triggers gradual frequency Key parameters: - OPP index starts from 0. Lower index = higher frequency -- Hysteresis: 2 ℃ (trigger temperature - 2 ℃ = exit temperature) +- Hysteresis: 2 °C (trigger temperature - 2 °C = exit temperature) Dual cluster configuration: - Cluster1 (CPU0–7): opp_table0_x100 @@ -1023,27 +1023,27 @@ OPP8: 1300 MHz #### 3.2.2 Full Temperature Range Strategy (Heating + Cooling) -1. Temperature < 83 ℃ +1. Temperature < 83 °C Status: No limitation (maximum performance) - Cluster1: 2400 MHz (OPP0) - Cluster2: 2000 MHz (OPP0) - Temperature rise: ≥85 ℃ → enter 85 ℃ frequency lock + Temperature rise: ≥85 °C → enter 85 °C frequency lock Temperature drop: maintain full performance, no action -2. 83 ℃ ≤ Temperature < 93 ℃ (85 ℃ active thermal control) +2. 83 °C ≤ Temperature < 93 °C (85 °C active thermal control) Limit: Fixed frequency lock - Cluster1: OPP2 = 2200 MHz - Cluster2: OPP3 = 1800 MHz - Temperature rise: ≥95 ℃ → enter 95 ℃ dynamic throttling + Temperature rise: ≥95 °C → enter 95 °C dynamic throttling - Temperature drop: ≤83 ℃ → release lock, restore full performance (OPP0) + Temperature drop: ≤83 °C → release lock, restore full performance (OPP0) -3. 93 ℃ ≤ Temperature < 103 ℃ (95 ℃ passive thermal control) +3. 93 °C ≤ Temperature < 103 °C (95 °C passive thermal control) Limit: Dynamic frequency scaling within range - Cluster1: OPP3 ~ OPP5 → 2150 MHz ~ 2000 MHz @@ -1053,11 +1053,11 @@ OPP8: 1300 MHz - Temperature rise: hotter → higher OPP index → lower frequency - Temperature drop: cooler → lower OPP index → higher frequency - Temperature rise: ≥105 ℃ → enter 105 ℃ deep throttling + Temperature rise: ≥105 °C → enter 105 °C deep throttling - Temperature drop: ≤93 ℃ → return to 85 ℃ fixed frequency lock + Temperature drop: ≤93 °C → return to 85 °C fixed frequency lock -4. 103 ℃ ≤ Temperature < 113 ℃ (105 ℃ deep passive thermal control) +4. 103 °C ≤ Temperature < 113 °C (105 °C deep passive thermal control) Limit: Deep aggressive throttling - Cluster1: OPP6 ~ OPP8 → 1900 MHz ~ 1800 MHz @@ -1067,11 +1067,11 @@ OPP8: 1300 MHz - Temperature rise: hotter → throttle to lowest frequency in range - Temperature drop: cooler → gradually return to higher frequency in range - Temperature rise: ≥115 ℃ → emergency shutdown + Temperature rise: ≥115 °C → emergency shutdown - Temperature drop: ≤103 ℃ → return to 95 ℃ dynamic throttling + Temperature drop: ≤103 °C → return to 95 °C dynamic throttling -5. Temperature ≥ 113 ℃ (115 ℃ critical) +5. Temperature ≥ 113 °C (115 °C critical) Action: System immediately shuts down / reboots @@ -1085,11 +1085,11 @@ Note: After K3 system boot, the default maximum frequencies are | Temperature Range | Control Method | Cluster1 | Cluster2 | Temperature Rise Trigger (Enter Next Stage) | Temperature Drop Trigger (Return to Previous Stage) | | --- | --- | --- | --- | --- | --- | -| < 83℃ | Full performance | 2400 MHz | 2000 MHz | ≥85℃ → frequency lock | None | -| 83~93℃ | Fixed frequency lock | 2200 MHz | 1800 MHz | ≥95℃ → dynamic throttling | ≤83℃ → restore full performance | -| 93~103℃ | Dynamic throttling | 2150~2000 MHz | 1700~1600 MHz | ≥105℃ → deep throttling | ≤93℃ → return to frequency lock | -| 103~113℃ | Deep throttling | 1900~1800 MHz | 1500~1300 MHz | ≥115℃ → shutdown | ≤103℃ → return to dynamic | -| ≥115℃ | Emergency shutdown | Shutdown | Shutdown | Immediate shutdown | No automatic recovery | +| < 83°C | Full performance | 2400 MHz | 2000 MHz | ≥85°C → frequency lock | None | +| 83~93°C | Fixed frequency lock | 2200 MHz | 1800 MHz | ≥95°C → dynamic throttling | ≤83°C → restore full performance | +| 93~103°C | Dynamic throttling | 2150~2000 MHz | 1700~1600 MHz | ≥105°C → deep throttling | ≤93°C → return to frequency lock | +| 103~113°C | Deep throttling | 1900~1800 MHz | 1500~1300 MHz | ≥115°C → shutdown | ≤103°C → return to dynamic | +| ≥115°C | Emergency shutdown | Shutdown | Shutdown | Immediate shutdown | No automatic recovery | ### 3.3 PCB Thermal Design Reference @@ -1142,8 +1142,8 @@ K3 chips use environmentally friendly materials. Pb-Free process is recommended. | Material / Parameter / Tool | Criteria | 49VP03 | | --- | --- | --- | -| Soaking time (127~170 ℃) | 60~90 sec | 61~64 sec | -| Ramp up rate (170~245 ℃) | 0.5~1.2 (℃/sec) | 0.81~0.86 (℃/sec) | -| Peak temperature | 235~245 ℃ | 235.94~238.3 ℃ | -| Reflow time (> 220 ℃) | 35~55 sec | 44~47 sec | -| Cooling rate (245~120 ℃) | ≤ 2.5 (℃/sec) | 1.23~1.28 (℃/sec) | +| Soaking time (127~170 °C) | 60~90 sec | 61~64 sec | +| Ramp up rate (170~245 °C) | 0.5~1.2 (°C/sec) | 0.81~0.86 (°C/sec) | +| Peak temperature | 235~245 °C | 235.94~238.3 °C | +| Reflow time (> 220 °C) | 35~55 sec | 44~47 sec | +| Cooling rate (245~120 °C) | ≤ 2.5 (°C/sec) | 1.23~1.28 (°C/sec) | diff --git a/en/power_stone/p1/p1_docs/p1_ds.md b/en/power_stone/p1/p1_docs/p1_ds.md index 3de3ecb..6d3dfd4 100644 --- a/en/power_stone/p1/p1_docs/p1_ds.md +++ b/en/power_stone/p1/p1_docs/p1_ds.md @@ -830,7 +830,7 @@ Table 6-4: PMIC Mode Management | VSYS | DIGITAL | - | - | x | x | x | x | | AONLDO | GPIO | - | - | - | - | x | x | | | INT | - | - | - | - | x | x | -| | IIC | - | - | - | - | x | x | +| | I²C | - | - | - | - | x | x | ### 6.3 PMIC Events and Behaviors @@ -1301,7 +1301,7 @@ When the shutdown protection for a power rail is enabled (PROT_EN[5:0], Table 7- Over-Temperature Protection Levels -| SYS_CFG0[7] (Table 7-125) | Warning Temp (℃) | Severe Temp (℃) | Critical Temp (℃) | +| SYS_CFG0[7] (Table 7-125) | Warning Temp (°C) | Severe Temp (°C) | Critical Temp (°C) | |----------------------------|-----------------|----------------|------------------| | 0 | 95 | 115 | 135 | | 1 | 110 | 130 | 150 | diff --git a/en/power_stone/p1s/p1s_docs/p1s_ds.md b/en/power_stone/p1s/p1s_docs/p1s_ds.md index b39243d..e51e548 100644 --- a/en/power_stone/p1s/p1s_docs/p1s_ds.md +++ b/en/power_stone/p1s/p1s_docs/p1s_ds.md @@ -43,7 +43,7 @@ Individual output voltages and startup/shutdown sequences can be preset via the - 12-bit ADC with 8 channels and configurable alarm thresholds - Output voltage and startup/shutdown sequence can be preset by MTP - 6 GPIO pins for peripheral control -- Chip junction temperature: - 40℃ to 125℃ +- Chip junction temperature: - 40°C to 125°C - Package: QFN-60, 7x7mm, 0.4mm pitch ### 1.3 Application @@ -419,14 +419,14 @@ Table 3-2 P1S pin description 44 SDA DIO -IIC communication interface data signal +I²C communication interface data signal 45 SCL DIN -IIC communication interface clock signal +I²C communication interface clock signal @@ -624,7 +624,7 @@ Table 5-1 Recommended working conditions -40 125 -℃ +°C V(SYS) @@ -651,7 +651,7 @@ Table 5-1 Recommended working conditions 38 -℃/W +°C/W R(JC) @@ -660,7 +660,7 @@ Table 5-1 Recommended working conditions 12 -℃/W +°C/W R(JB) @@ -669,7 +669,7 @@ Table 5-1 Recommended working conditions 9 -℃/W +°C/W @@ -700,7 +700,7 @@ Table 5-2 Power consumption in each mode RTC mode -Vin=5V, Ta=25℃ +Vin=5V, Ta=25°C 1.5 @@ -708,7 +708,7 @@ Table 5-2 Power consumption in each mode Shutdown mode-SHUTDOWN -Vin=5V, Ta=25℃ +Vin=5V, Ta=25°C 35 @@ -751,7 +751,7 @@ Table 5-3 Digital pin electrical characteristics V(IH) High level input -2.7 ～ 5.5 V，-40 ~ 105 ℃ +2.7 ～ 5.5 V，-40 ~ 105 °C 0.3 * AONLDO @@ -760,7 +760,7 @@ Table 5-3 Digital pin electrical characteristics V(IL) low level input -2.7 ～ 5.5 V，-40 ~ 105 ℃ +2.7 ～ 5.5 V，-40 ~ 105 °C 0.7 * AONLDO @@ -769,7 +769,7 @@ Table 5-3 Digital pin electrical characteristics V(OH) High level output -5 V，25 ℃,
AONLDO = 1.8 V，I(LOAD)=1 mA +5 V，25 °C,
AONLDO = 1.8 V，I(LOAD)=1 mA AONLDO - 0.1 @@ -778,7 +778,7 @@ Table 5-3 Digital pin electrical characteristics V(OL) Low level output -5V，25 ℃,
AONLDO = 1.8 V，I(LOAD)=1 mA +5V，25 °C,
AONLDO = 1.8 V，I(LOAD)=1 mA 0.1 @@ -787,7 +787,7 @@ Table 5-3 Digital pin electrical characteristics I(DRIVE) Source current drive -5V，25 ℃,
AONLDO = 1.8 V，PAD = 1.3 V +5V，25 °C,
AONLDO = 1.8 V，PAD = 1.3 V 10 @@ -796,7 +796,7 @@ Table 5-3 Digital pin electrical characteristics I(SINK) Sink current driver -5V，25 ℃,
AONLDO = 1.8 V，PAD = 0.5 V +5V，25 °C,
AONLDO = 1.8 V，PAD = 0.5 V 25 @@ -1701,7 +1701,7 @@ Table 5-11 ADC electrical characteristics DNL differential nonlinearity -2.7 ~ 5.5 V
-40 ~ 105 ℃ +2.7 ~ 5.5 V
-40 ~ 105 °C -3 3 @@ -1710,7 +1710,7 @@ Table 5-11 ADC electrical characteristics INL Integral nonlinearity
-2.7 ~ 5.5 V
-40 ~ 105 ℃ +2.7 ~ 5.5 V
-40 ~ 105 °C -4 4 @@ -1719,7 +1719,7 @@ Table 5-11 ADC electrical characteristics Offset error Offset error -2.7 ~ 5.5 V
-40 ~ 105 ℃ +2.7 ~ 5.5 V
-40 ~ 105 °C -4 4 @@ -1728,7 +1728,7 @@ Table 5-11 ADC electrical characteristics Gain error Gain error -2.7 ~ 5.5 V
-40 ~ 105 ℃ +2.7 ~ 5.5 V
-40 ~ 105 °C -4 4 @@ -1737,7 +1737,7 @@ Table 5-11 ADC electrical characteristics Sample rate Sampling rate -25 ℃ +25 °C 0.1 25 @@ -1746,7 +1746,7 @@ Table 5-11 ADC electrical characteristics I(WORK) Working current -5V，25 ℃ +5V，25 °C 190 @@ -1771,7 +1771,7 @@ Table 5-12 ADC internal reference electrical characteristics V(REF_2V) 2V reference voltage -2.7 ~ 5.5 V，25 ℃ +2.7 ~ 5.5 V，25 °C 1.995 2 2.005 @@ -1780,7 +1780,7 @@ Table 5-12 ADC internal reference electrical characteristics V(REF_3V) 3V reference voltage -3.5 ~ 5.5 V，25 ℃ +3.5 ~ 5.5 V，25 °C 2.995 3 3.005 @@ -1789,7 +1789,7 @@ Table 5-12 ADC internal reference electrical characteristics I(WORK) Working current -5.0V，-40 ~ 105 ℃ +5.0V，-40 ~ 105 °C 400 @@ -1816,7 +1816,7 @@ Table 5-13 Internal LSI electrical characteristics F(ACC) 频率精度 -5 V，25 ℃ +5 V，25 °C 30 32 34 @@ -1825,7 +1825,7 @@ Table 5-13 Internal LSI electrical characteristics V(C) 电压系数 -2.0 ~ 5.5 V，25 ℃ +2.0 ~ 5.5 V，25 °C -7 7 @@ -1834,7 +1834,7 @@ Table 5-13 Internal LSI electrical characteristics T(C) 温度系数 -5V，-40 ~ 105 ℃ +5V，-40 ~ 105 °C -10 10 @@ -1843,7 +1843,7 @@ Table 5-13 Internal LSI electrical characteristics I(WORK) 工作电流 -2.0 ~ 5.5 V，-40 ~ 105 ℃ +2.0 ~ 5.5 V，-40 ~ 105 °C 0.4 0.9 1.5 @@ -1868,7 +1868,7 @@ Table 5-14 Internal HSI electrical characteristics F(ACC) Frequency accuracy -5 V，25 ℃ +5 V，25 °C 1.98 2 2.02 @@ -1877,7 +1877,7 @@ Table 5-14 Internal HSI electrical characteristics V(C) Voltage coefficient -2.0 ~ 5.5 V，25 ℃ +2.0 ~ 5.5 V，25 °C -0.5 0.5 @@ -1886,7 +1886,7 @@ Table 5-14 Internal HSI electrical characteristics T(C) Temperature coefficient -5V，-40 ~ 105 ℃ +5V，-40 ~ 105 °C -3 3 @@ -1895,7 +1895,7 @@ Table 5-14 Internal HSI electrical characteristics I(WORK) Working current -2.0 ~ 5.5 V，-40 ~ 105 ℃ +2.0 ~ 5.5 V，-40 ~ 105 °C 45 80 120 @@ -1922,7 +1922,7 @@ Table 5-15 Crystal oscillator electrical characteristics C(LOAD) External load capacitor -2.7 ~ 5.5 V，-40 ~ 105 ℃ +2.7 ~ 5.5 V，-40 ~ 105 °C 7 22.5
30 @@ -1931,7 +1931,7 @@ Table 5-15 Crystal oscillator electrical characteristics I(WORK) Working current -5 V，25 ℃，C(LOAD) = 12.5 pF +5 V，25 °C，C(LOAD) = 12.5 pF 1 @@ -1940,7 +1940,7 @@ Table 5-15 Crystal oscillator electrical characteristics T(SETUP) Start time -5 V，25 ℃ +5 V，25 °C 0.6 @@ -1967,7 +1967,7 @@ Table 5-16 Electrical characteristics of power-on and power-off reset POR Power on reset voltage --40 ~ 105 ℃ +-40 ~ 105 °C 1.75 2.0 2.25 @@ -1976,7 +1976,7 @@ Table 5-16 Electrical characteristics of power-on and power-off reset PDR Power down reset voltage --40 ~ 105 ℃ +-40 ~ 105 °C 1.75 2.0 2.25 @@ -1985,7 +1985,7 @@ Table 5-16 Electrical characteristics of power-on and power-off reset T(FILTER) POR pulse interference filter length -25 ℃，3 V ~ 1.5 V +25 °C，3 V ~ 1.5 V 2.0 @@ -1994,7 +1994,7 @@ Table 5-16 Electrical characteristics of power-on and power-off reset I(WORK) Working current -2.0 ~ 5.5 V，-40 ~ 105 ℃ +2.0 ~ 5.5 V，-40 ~ 105 °C 0.1 0.3 1 @@ -2021,7 +2021,7 @@ Table 5-17 RTC power-on and power-off reset electrical characteristics POR Power on reset voltage --40 ~ 105 ℃ +-40 ~ 105 °C 1.55 1.7 1.85 @@ -2030,7 +2030,7 @@ Table 5-17 RTC power-on and power-off reset electrical characteristics PDR Power down reset voltage --40 ~ 105 ℃ +-40 ~ 105 °C 1.55 1.7 1.85 @@ -2039,7 +2039,7 @@ Table 5-17 RTC power-on and power-off reset electrical characteristics I(WORK) Working current -2.0 ~ 5.5 V，-40 ~ 105 ℃ +2.0 ~ 5.5 V，-40 ~ 105 °C 0.1 0.3 1 @@ -2050,7 +2050,7 @@ Table 5-17 RTC power-on and power-off reset electrical characteristics ## 6. Function description -P1S is a low-voltage multi-channel power management chip (PMIC) that integrates 6 channels of fast transient response BUCK and 12 channels of low-noise LDO. It also integrates MTP internally, which can flexibly customize the default voltage and switch of each output according to different usage scenarios. Machine timing to meet the power supply timing requirements of different SoC platforms. +P1S is a low-voltage multi-channel power management chip (PMIC) that integrates 6 channels of fast transient response BUCK and 5 channels of low-noise LDO. It also integrates MTP internally, which can flexibly customize the default voltage and switch of each output according to different usage scenarios. Machine timing to meet the power supply timing requirements of different SoC platforms. ### 6.1 Power management pins @@ -2552,7 +2552,7 @@ Table 6-4 PMIC mode management x -IIC +I²C - - - @@ -2920,7 +2920,7 @@ Figure 6-9 Cold reset process ### 6.5 Watchdog -In power-on mode and sleep mode, the host can enable the watchdog and configure the timeout through the IIC communication interface (**Table 7-72** WDT\_CTRL[2:1]). +In power-on mode and sleep mode, the host can enable the watchdog and configure the timeout through the I²C communication interface (**Table 7-72** WDT\_CTRL[2:1]). If the host does not perform a dog feeding operation within the set timeout period (**Table 7-72 WDT\_CTRL[0]=1), a watchdog timeout event will occur and the relevant flag bit will be set (Table 7-108 **EVENT1[3]). @@ -2943,11 +2943,11 @@ GPIOx\_ODR multiplexes two functions: 1. When used as a GPIO output (GPIOx\_MODE=2’b01), GPIOx\_ODR is the GPIO output state. 2. When used as a multiplexing function (GPIOx\_MODE=2’b1x), GPIOx\_ODR is the effective status configuration bit of the relevant multiplexing function. -### 6.7 IIC communication interface +### 6.7 I²C communication interface -The communication interface of PMIC is IIC, the maximum supported speed is 1MHz, this PMIC can only be used as a slave. +The communication interface of PMIC is I²C, the maximum supported speed is 1MHz, this PMIC can only be used as a slave. -In shutdown mode, the SCL and SDA interfaces do not work. Only after entering power-on mode and sleep mode can the host operate the PMIC register through the IIC interface. This IIC slave address can be configured through MTP: Table 7-125 SYS\_CFG0[6:0]. +In shutdown mode, the SCL and SDA interfaces do not work. Only after entering power-on mode and sleep mode can the host operate the PMIC register through the I²C interface. This I²C slave address can be configured through MTP: Table 7-125 SYS\_CFG0[6:0]. ### 6.8 LDO @@ -2996,7 +2996,7 @@ Table 6-7 LDO control parameters -The enablement of all LDOs (except AONLDO) and voltage adjustment can be modified through software, that is, the host accesses the PMIC internal registers through IIC. AONLDO remains normally open after VSYS is powered on (VSYS \> 2.7 V). AONLDO has no sleep voltage to set, while other LDOs do, and the step size of all LDO voltage adjustments is 25 mV. +The enablement of all LDOs (except AONLDO) and voltage adjustment can be modified through software, that is, the host accesses the PMIC internal registers through I²C. AONLDO remains normally open after VSYS is powered on (VSYS \> 2.7 V). AONLDO has no sleep voltage to set, while other LDOs do, and the step size of all LDO voltage adjustments is 25 mV. ALDO1~4 and DLDO1~7 can also be controlled by hardware: @@ -3130,9 +3130,9 @@ The over-temperature protection gears are as follows: Table 7125 SYS_CFG0[7] -Temperature alarm(warning)/ ℃ -Severe overheating(severe)/ ℃ -Shut down and overheat(critical)/ ℃ +Temperature alarm(warning)/ °C +Severe overheating(severe)/ °C +Shut down and overheat(critical)/ °C 0 @@ -8953,7 +8953,7 @@ Table 7-120 IRQ\_PWRKY\_EN TEMP_CRIT_PROT RWE 0x0 -Over temperature (135℃/150℃) shutdown protection enabled
0: Prohibited
1: enable +Over temperature (135°C/150°C) shutdown protection enabled
0: Prohibited
1: enable 5 @@ -9159,14 +9159,14 @@ Table 7-125 SYS\_CFG0 TEMP_LEVEL RE 0x0 -Temperature range selection
warn severe critical
0： 95 ℃ 115 ℃ 135℃
1： 110 ℃ 130 ℃ 150℃ +Temperature range selection
warn severe critical
0： 95 °C 115 °C 135°C
1： 110 °C 130 °C 150°C 6:0 IF_ADDR RE 0x55 -IIC slave address configuration +I²C slave address configuration diff --git a/en/power_stone/p1s/p1s_docs/root_overview.md b/en/power_stone/p1s/p1s_docs/root_overview.md index 9e03efd..0ec7d5c 100644 --- a/en/power_stone/p1s/p1s_docs/root_overview.md +++ b/en/power_stone/p1s/p1s_docs/root_overview.md @@ -9,7 +9,7 @@ P1S is a high-performance multi-channel power management chip (PMIC), designed t P1S is mainly used for AR/VR, industrial devices, AI robots, and drones. - **Highly Flexible Power Management Capabilities** -It features 6 channels of COT (Constant On-Time) control buck converters, 12 Low Drop-Out (LDO) regulators, and an I2C interface, providing highly flexible power management capabilities for a range of mobile devices and embedded systems. +It features 6 channels of COT (Constant On-Time) control buck converters, 5 Low Drop-Out (LDO) regulators, and an I²C interface, providing highly flexible power management capabilities for a range of mobile devices and embedded systems. - **Provide Safe and Stable Power** Six integrated buck converters power a variety of target rails. Constant-on-time (COT) control offers fast transient performance. The 1.5MHz, default, fixed switching frequency during continuous conduction mode (CCM) reduces the external inductor and capacitor values greatly. Full protection features include UVLO, OCP, OVP and thermal shutdown. Dynamic voltage control (DVC) enables supply voltage controllability based on the application requirements. The output voltage and start up/shutdown sequence can be preset by the multiple-time programmable (MTP) interface and controlled via the I2C bus. @@ -20,7 +20,7 @@ The P1S requires a minimal number of external components, and is available in a ## Key Features - **Power supply voltage (VIN)** - - 2.6V ~ 5.5V + - 2.7V ~ 5.5V - **6 High-Efficiency Buck Converters** - Buck1/2: 0.5V ~ 3.4V, 4A , can dual phase operation @@ -32,7 +32,7 @@ The P1S requires a minimal number of external components, and is available in a - **5 Programmable LDO regulators** - 1 Dedicated always on LDO - - 5 Low-Noise LDOs + - 4 Low-Noise LDOs - VOUT: 0.5V ~ 3.4V, 25mV step - IOUT: 0.3A max @@ -46,7 +46,7 @@ The P1S requires a minimal number of external components, and is available in a - **6 GPIO pins for peripheral control** -- **-40℃ ~ 125℃ junction temperature** +- **-40°C ~ 125°C junction temperature** - **Package: QFN-60 7mm * 7mm, 0.4mm pitch** diff --git a/en/power_stone/p3/p3_docs/p3_ds.md b/en/power_stone/p3/p3_docs/p3_ds.md index e467d25..3ee3c99 100644 --- a/en/power_stone/p3/p3_docs/p3_ds.md +++ b/en/power_stone/p3/p3_docs/p3_ds.md @@ -117,8 +117,8 @@ P3 Pin Description |Parameter|Description|Condition|Min|Typ|Max|Unit| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|TSTG|Storage temperature|-|- 40|-|150|℃| -|TJ|Junction temperature|-|-40|-|125|℃| +|TSTG|Storage temperature|-|- 40|-|150|°C| +|TJ|Junction temperature|-|-40|-|125|°C| |VSYS|System supply voltage|-|-0.3|-|5.8|V| |VESD_HBM|ESD protection - HBM|-|2|-|-|kV| |VESD_CDM|ESD protection - CDM|-|500|-|-|V| @@ -127,19 +127,19 @@ P3 Pin Description |Parameter|Description|Condition|Min|Typ|Max|Unit| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|TJ|Junction temperature|-|-|-|85|℃| +|TJ|Junction temperature|-|-|-|85|°C| |VSYS|System supply voltage|-|3.3|5.0|5.5|V| |PDIS|Maximum chip power dissipation|-|-|-|2|W| -|RJA|Junction-to-ambient thermal resistance|-|-|31|-|℃/W| -|RJC|Junction-to-case thermal resistance|-|-|-|-|℃/W| -|RJB|Junction-to-board thermal resistance|-|-|-|-|℃/W| +|RJA|Junction-to-ambient thermal resistance|-|-|31|-|°C/W| +|RJC|Junction-to-case thermal resistance|-|-|-|-|°C/W| +|RJB|Junction-to-board thermal resistance|-|-|-|-|°C/W| |ISHDN|Shutdown mode current|CE = 0|-|17|-|μA| ### 4.3 Digital Pin Electrical Characteristics #### Top-Level Electrical Characteristics -(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 ℃; typical values are at VSYS = 5 V, TJ = +25 ℃) +(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 °C; typical values are at VSYS = 5 V, TJ = +25 °C) **LOGIC AND CONTROL INPUTS** @@ -170,7 +170,7 @@ P3 Pin Description **I2C Electrical Characteristics** -(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 ℃; typical values are at VSYS = 5 V, TJ = +25 ℃) +(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 °C; typical values are at VSYS = 5 V, TJ = +25 °C) **POWER SUPPLY** @@ -218,7 +218,7 @@ P3 Pin Description #### SPI Electrical Characteristics -(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 ℃; typical values are at VSYS = 5 V, TJ = +25 ℃) +(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 °C; typical values are at VSYS = 5 V, TJ = +25 °C) **POWER SUPPLY AND I/O STAGES** @@ -270,8 +270,8 @@ BUCK1~4 Electrical Characteristics |Soft on / off Slow|Soft-start/soft-stop time|SOFT_STA_SLEW / SOFT_STP_SLEW|-|10|-|mV/μs| |Soft on / off Slow|Soft-start/soft-stop time|SOFT_STA_SLEW / SOFT_STP_SLEW|-|25|-|mV/μs| |Soft on / off Slow|Soft-start/soft-stop time|SOFT_STA_SLEW / SOFT_STP_SLEW|-|50|-|mV/μs| -|VBUCK_ACC|Output voltage accuracy|VOUT > 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 ℃|-|-|±1|%| -|VBUCK_ACC|Output voltage accuracy|VOUT < 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 ℃|-|-|±8|mV| +|VBUCK_ACC|Output voltage accuracy|VOUT > 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 °C|-|-|±1|%| +|VBUCK_ACC|Output voltage accuracy|VOUT < 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 °C|-|-|±8|mV| |Load Regulation|Load regulation|IOUT = 0.1 ~ 8 A, VOUT > 0.8 V, CCM|-|-|±1|%| |Load Regulation|Load regulation|IOUT = 0.1 ~ 8 A, VOUT < 0.8 V, CCM|-|-|±8|mV| |Line Regulation|Line regulation|VIN = 3.0 ~ 5.5 V, VOUT > 0.8 V, CCM|-|-|±1|%| @@ -293,8 +293,8 @@ BUCK1~4 Electrical Characteristics |OV||VOUT/VOUT_target - 1|-|12.5|-|%| |UV||VOUT/VOUT_target - 1||-10.0|-|%| |Power Down resistor||-|-|120|-|Ω| -|SWx Leakage Current|SW pin leakage current|CE = 0, VLXx = 0 or 5.5 V, 25 ℃|-0.3|-|0.3|uA| -|SWx Leakage Current|SW pin leakage current|CE = 0, VLXx = 0 or 5.5 V, 85 ℃|-3|-|3|-| +|SWx Leakage Current|SW pin leakage current|CE = 0, VLXx = 0 or 5.5 V, 25 °C|-0.3|-|0.3|uA| +|SWx Leakage Current|SW pin leakage current|CE = 0, VLXx = 0 or 5.5 V, 85 °C|-3|-|3|-| |Efficiency|Efficiency|VIN = 4 V, VOUT = 0.9 V
IOUT = 1 A/Phase|-|90|-|%| |Efficiency|Efficiency|VIN = 4 V, VOUT = 0.9 V
IOUT = 6.0 A/Phase|-|80|-|-| |Efficiency|Efficiency|VIN = 4 V, VOUT = 0.9 V
IOUT = 8.0 A/Phase|-|77|-|-| @@ -307,22 +307,22 @@ ADC Electrical Characteristics |:---:|:---:|:---:|:---:|:---:|:---:|:---:| |Resolution|Resolution|-|-|-|12|Bits| |VDD|Supply voltage|-|2.5|-|5.5|V| -|DNL|Differential non-linearity|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±3|-|LSB| -|INL|Integral non-linearity|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±3|-|LSB| -|Offset error|Offset error|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±5|-|LSB| -|Gain error|Gain error|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±5|-|LSB| -|Sample rate|Sample rate|T = 25 ℃, Freq = 1 MHz|-|76|-|Ksps| -|IWORK|Operating current|T = 25 ℃, Freq = 0.5 MHz|-|180|-|μA| +|DNL|Differential non-linearity|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±3|-|LSB| +|INL|Integral non-linearity|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±3|-|LSB| +|Offset error|Offset error|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±5|-|LSB| +|Gain error|Gain error|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±5|-|LSB| +|Sample rate|Sample rate|T = 25 °C, Freq = 1 MHz|-|76|-|Ksps| +|IWORK|Operating current|T = 25 °C, Freq = 0.5 MHz|-|180|-|μA| ADC Internal Reference Electrical Characteristics |Parameter|Description|Condition|Min|Typ|Max|Unit| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|VREF_2V|2V reference voltage|VDD = 4.25 V, T = 25 ℃|2.046|2.048|2.050|V| -|VREF_3V|3V reference voltage|VDD = 4.25 V, T = 25 ℃|3.070|3.072|3.074|V| -|VC|Voltage coefficient|VDD = 4.25 V, T = 25 ℃|-|-|-|%| +|VREF_2V|2V reference voltage|VDD = 4.25 V, T = 25 °C|2.046|2.048|2.050|V| +|VREF_3V|3V reference voltage|VDD = 4.25 V, T = 25 °C|3.070|3.072|3.074|V| +|VC|Voltage coefficient|VDD = 4.25 V, T = 25 °C|-|-|-|%| |TC|Temperature coefficient|VDD = 4.25 V|-|-|-|%| -|IWORK|Operating current|VDD = 4.25 V, T = 25 ℃|-|200|-|μA| +|IWORK|Operating current|VDD = 4.25 V, T = 25 °C|-|200|-|μA| ### 4.7 Clocks @@ -330,19 +330,19 @@ Internal LSI Electrical Characteristics |Parameter|Description|Condition|Min|Typ|Max|Unit| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|FACC|Frequency accuracy|5 V, 25 ℃|-|64|-|kHz| -|VC|Voltage coefficient|2.7 ~ 5.5 V, 25 ℃|-|-|-|%| -|TC|Temperature coefficient|5 V, -40 ~ 105 ℃|-|-|-|%| -|IWORK|Operating current|2.7 ~ 5.5 V, -40 ~ 105 ℃|-|-|-|μA| +|FACC|Frequency accuracy|5 V, 25 °C|-|64|-|kHz| +|VC|Voltage coefficient|2.7 ~ 5.5 V, 25 °C|-|-|-|%| +|TC|Temperature coefficient|5 V, -40 ~ 105 °C|-|-|-|%| +|IWORK|Operating current|2.7 ~ 5.5 V, -40 ~ 105 °C|-|-|-|μA| Internal HSI Electrical Characteristics |Parameter|Description|Condition|Min|Typ|Max|Unit| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|FACC|Frequency accuracy|5 V, 25 ℃|-|8|-|MHz| -|VC|Voltage coefficient|2.7 ~ 5.5 V, 25 ℃|-|-|-|%| -|TC|Temperature coefficient|5 V, -40 ~ 105 ℃|-|-|-|%| -|IWORK|Operating current|2.0 ~ 5.5 V, -40 ~ 105 ℃|-|-|-|μA| +|FACC|Frequency accuracy|5 V, 25 °C|-|8|-|MHz| +|VC|Voltage coefficient|2.7 ~ 5.5 V, 25 °C|-|-|-|%| +|TC|Temperature coefficient|5 V, -40 ~ 105 °C|-|-|-|%| +|IWORK|Operating current|2.0 ~ 5.5 V, -40 ~ 105 °C|-|-|-|μA| ### 4.8 POR/PDR diff --git a/zh/key_stone/k1/k1_docs/root_overview.md b/zh/key_stone/k1/k1_docs/root_overview.md index 8138fe9..9fff993 100644 --- a/zh/key_stone/k1/k1_docs/root_overview.md +++ b/zh/key_stone/k1/k1_docs/root_overview.md @@ -28,7 +28,7 @@ RISC-V 架构的精简和卓越的微架构设计，同负载场景功耗只有 集成多套 PCIe、USB、GMAC、SPI 等接口，提供全面的外设连接选型。 - **符合工业级标准** -CPU 在 -40˚C～85˚C 的环境温度下仍能提供稳定可靠的持续算力输出，满足工业应用的苛刻环境需求。 +CPU 在 -40°C～85°C 的环境温度下仍能提供稳定可靠的持续算力输出，满足工业应用的苛刻环境需求。 ## 特性 diff --git a/zh/key_stone/k1/k1_hw/avl_veri_sop.md b/zh/key_stone/k1/k1_hw/avl_veri_sop.md index 5297fea..d14ed11 100644 --- a/zh/key_stone/k1/k1_hw/avl_veri_sop.md +++ b/zh/key_stone/k1/k1_hw/avl_veri_sop.md @@ -17,7 +17,7 @@ sidebar_position: 4 ### 1.2 测试环境 -测试环境包含室温、低温与高低温循环。商规工作温度为 -20℃~70℃，工规工作温度为 -40℃~85℃。具体设置如下： +测试环境包含室温、低温与高低温循环。商规工作温度为 -20°C~70°C，工规工作温度为 -40°C~85°C。具体设置如下： 商规器件测试环境 diff --git a/zh/key_stone/k1/k1_sw/k1_sw_faq.md b/zh/key_stone/k1/k1_sw/k1_sw_faq.md index ddf3f99..1576d44 100644 --- a/zh/key_stone/k1/k1_sw/k1_sw_faq.md +++ b/zh/key_stone/k1/k1_sw/k1_sw_faq.md @@ -946,7 +946,7 @@ TBD - **步骤 2：** 将新编译的设备树（dts）刷入设备，并重启设备。 - **步骤 3：** 验证更改，使用适当的工具监控系统温度，确保温控设置按预期工作。 - **注意：** 更改温控设置可能会影响系统稳定性和硬件寿命，因此在进行这些更改时应谨慎操作。建议在更改前阅读相关文档或寻求专业指导。（建议最高温度为 115℃） + **注意：** 更改温控设置可能会影响系统稳定性和硬件寿命，因此在进行这些更改时应谨慎操作。建议在更改前阅读相关文档或寻求专业指导。（建议最高温度为 115°C） 若想去掉温控，可关掉配置 kernel 的编译配置 CONFIG\_THERMAL，但“不建议关掉”。 10. **如何通过命令行拉高 GPIO？** diff --git a/zh/key_stone/k3/k3_docs/k3_ds.md b/zh/key_stone/k3/k3_docs/k3_ds.md index 19f62ec..d9cdd3f 100644 --- a/zh/key_stone/k3/k3_docs/k3_ds.md +++ b/zh/key_stone/k3/k3_docs/k3_ds.md @@ -2664,7 +2664,7 @@ K3 的 I/O 引脚支持 **功能 0 至 功能 7（Function 0–7）** 的信号 ### 5.3 热特性 -热阻：0.23℃/W （带散热盖） +热阻：0.23°C/W （带散热盖） ### 5.4 引脚最大电流 diff --git a/zh/key_stone/k3/k3_hw/k3_hw_design_guide.md b/zh/key_stone/k3/k3_hw/k3_hw_design_guide.md index 64d36eb..74eccc7 100644 --- a/zh/key_stone/k3/k3_hw/k3_hw_design_guide.md +++ b/zh/key_stone/k3/k3_hw/k3_hw_design_guide.md @@ -500,9 +500,9 @@ K3 有 17 组 UART 接口，分为两类：X100 UART 和 RCPU UART。 - X100 UART 有 11 组，其中 UART0 是 2 线调试口，UART1~UART10 是 4 线接口，其中 UART1 可用于 secure domain。 - RCPU UART 有 6 组。 -#### 1.4.3 IIC +#### 1.4.3 I²C -K3 有 11 组 IIC 接口。 +K3 有 11 组 I²C 接口。 - 普通 I2C 有 9 组。 - PWR I2C/RCPU PWR I2C 各有 1 组，用于电源 IC 配置功能控制。 @@ -802,7 +802,7 @@ PCB 端损耗要求 < 2 dB@2.7 GHz。 ### 3.1 热阻仿真结果 -| Package | Jc（℃/W） | Jb（℃/W） | +| Package | Jc（°C/W） | Jb（°C/W） | | --- | --- | --- | | 热阻值 | 0.17 | | @@ -814,7 +814,7 @@ PCB 端损耗要求 < 2 dB@2.7 GHz。 - 温控策略：step_wise（温度升高逐级降频，温度降低逐级恢复） - OPP 索引从 0 开始，数字越小频率越高。 -- 回差：2 ℃（触发温度 - 2 ℃ = 退出温度）。 +- 回差：2 °C（触发温度 - 2 °C = 退出温度）。 - 双集群： - Cluster1（CPU0–7）：opp_table0_x100 - Cluster2（CPU8–15）：opp_table0_a100 @@ -846,23 +846,23 @@ OPP8：1300MHz #### 3.2.2 全温度区间完整策略（升温 + 降温） -1. 温度 < 83 ℃ +1. 温度 < 83 °C - 状态：无限制，满血运行 - Cluster1：2400 MHz（OPP0） - Cluster2：2000 MHz（OPP0） - - 温度升高：≥85 ℃ → 进入 85 ℃ 锁频 + - 温度升高：≥85 °C → 进入 85 °C 锁频 - 温度降低：保持满血，无动作 -2. 83 ℃ ≤ 温度 < 93 ℃（85 ℃ 主动温控） +2. 83 °C ≤ 温度 < 93 °C（85 °C 主动温控） - 限制：固定锁频 - Cluster1：OPP2 = 2200 MHz - Cluster2：OPP3 = 1800 MHz - - 温度升高：≥95 ℃ → 进入 95 ℃ 动态降频 - - 温度降低：≤83 ℃ → 解除锁频，恢复满血（OPP0） + - 温度升高：≥95 °C → 进入 95 °C 动态降频 + - 温度降低：≤83 °C → 解除锁频，恢复满血（OPP0） -3. 93 ℃ ≤ 温度 < 103 ℃（95 ℃ 被动温控） +3. 93 °C ≤ 温度 < 103 °C（95 °C 被动温控） - 限制：动态区间降频 - Cluster1：OPP3 ~ OPP5 → 2150 MHz ~ 2000 MHz @@ -870,10 +870,10 @@ OPP8：1300MHz - step_wise 行为： - 温度升高：越热 → OPP 索引越大 → 频率越低 - 温度降低：越冷 → OPP 索引越小 → 频率越高 - - 温度升高：≥105 ℃ → 进入 105 ℃ 深度降频 - - 温度降低：≤93 ℃ → 退回 85 ℃ 固定锁频 + - 温度升高：≥105 °C → 进入 105 °C 深度降频 + - 温度降低：≤93 °C → 退回 85 °C 固定锁频 -4. 103 ℃ ≤ 温度 < 113 ℃（105 ℃ 深度被动温控） +4. 103 °C ≤ 温度 < 113 °C（105 °C 深度被动温控） - 限制：深度强降频 - Cluster1：OPP6 ~ OPP8 → 1900 MHz ~ 1800 MHz @@ -881,10 +881,10 @@ OPP8：1300MHz - step_wise 行为： - 温度升高：越热 → 压到区间最低频 - 温度降低：越冷 → 逐步回到区间高频 - - 温度升高：≥115 ℃ → 紧急关机 - - 温度降低：≤103 ℃ → 退回 95 ℃ 动态降频 + - 温度升高：≥115 °C → 紧急关机 + - 温度降低：≤103 °C → 退回 95 °C 动态降频 -5. 温度 ≥ 113 ℃（115 ℃ critical） +5. 温度 ≥ 113 °C（115 °C critical） - 动作：系统立即关机 / 重启 - 无自动恢复，必须手动开机 @@ -895,11 +895,11 @@ OPP8：1300MHz | 温度区间 | 控制方式 | Cluster1 | Cluster2 | 升温触发（进入下一阶段） | 降温触发（退回上一阶段） | | --- | --- | --- | --- | --- | --- | -| ＜83℃ | 满血 | 2400 MHz | 2000 MHz | ≥85℃ → 锁频 | 无 | -| 83~93℃ | 固定锁频 | 2200 MHz | 1800 MHz | ≥95℃ → 动态降频 | ≤83℃ → 恢复满血 | -| 93~103℃ | 动态降频 | 2150~2000 MHz | 1700~1600 MHz | ≥105℃ → 深度降频 | ≤93℃ → 退回锁频 | -| 103~113℃ | 深度降频 | 1900~1800 MHz | 1500~1300 MHz | ≥115℃ → 关机 | ≤103℃ → 退回动态 | -| ≥115℃ | 紧急关机 | 关机 | 关机 | 直接关机 | 无自动恢复 | +| ＜83°C | 满血 | 2400 MHz | 2000 MHz | ≥85°C → 锁频 | 无 | +| 83~93°C | 固定锁频 | 2200 MHz | 1800 MHz | ≥95°C → 动态降频 | ≤83°C → 恢复满血 | +| 93~103°C | 动态降频 | 2150~2000 MHz | 1700~1600 MHz | ≥105°C → 深度降频 | ≤93°C → 退回锁频 | +| 103~113°C | 深度降频 | 1900~1800 MHz | 1500~1300 MHz | ≥115°C → 关机 | ≤103°C → 退回动态 | +| ≥115°C | 紧急关机 | 关机 | 关机 | 直接关机 | 无自动恢复 | ### 3.3 PCB 热设计参考 @@ -932,8 +932,8 @@ K3 芯片均采用环保材料，建议使用 Pb-Free 工艺。下表中的回 | Material / Parameter / Tool | Criteria | 49VP03 | | --- | --- | --- | -| Soaking time (127~170 ℃) | 60~90 sec | 61~64 sec | -| Ramp up rate (170~245 ℃) | 0.5~1.2 (℃/sec) | 0.81~0.86 (℃/sec) | -| Peak temperature | 235~245 ℃ | 235.94~238.3 ℃ | -| Reflow time (> 220 ℃) | 35~55 sec | 44~47 sec | -| Cooling rate (245~120 ℃) | ≤ 2.5 (℃/sec) | 1.23~1.28 (℃/sec) | +| Soaking time (127~170 °C) | 60~90 sec | 61~64 sec | +| Ramp up rate (170~245 °C) | 0.5~1.2 (°C/sec) | 0.81~0.86 (°C/sec) | +| Peak temperature | 235~245 °C | 235.94~238.3 °C | +| Reflow time (> 220 °C) | 35~55 sec | 44~47 sec | +| Cooling rate (245~120 °C) | ≤ 2.5 (°C/sec) | 1.23~1.28 (°C/sec) | diff --git a/zh/power_stone/p1/p1_docs/p1_ds.md b/zh/power_stone/p1/p1_docs/p1_ds.md index 5df01aa..c331db3 100644 --- a/zh/power_stone/p1/p1_docs/p1_ds.md +++ b/zh/power_stone/p1/p1_docs/p1_ds.md @@ -174,9 +174,9 @@ P1 引脚描述如下表所示。 | T(J) | 结温 | - | -40 | - | 125 | °C | | V(SYS) | 系统供电电压 | - | 2.7 | - | 5.5 | V | | P(DIS) | 芯片最大功耗 | - | - | - | 2 | W | -| R(JA) | Junction 到环境热阻 | - | - | 38 | - | ℃/W | -| R(JC) | Junction 到芯片表面热阻 | - | - | 12 | - | ℃/W | -| R(JB) | Junction 到 PCB 板热阻 | - | - | 9 | - | ℃/W | +| R(JA) | Junction 到环境热阻 | - | - | 38 | - | °C/W | +| R(JC) | Junction 到芯片表面热阻 | - | - | 12 | - | °C/W | +| R(JB) | Junction 到 PCB 板热阻 | - | - | 9 | - | °C/W | ### 5.2 各模式功耗情况 @@ -804,7 +804,7 @@ OUT_32K 引脚可输出内部慢时钟或晶振时钟，通过 RTC_CTRL[3]（表 | VSYS | DIGITAL | - | - | x | x | x | x | | AONLDO | GPIO | - | - | - | - | x | x | | | INT | - | - | - | - | x | x | -| | IIC | - | - | - | - | x | x | +| | I²C | - | - | - | - | x | x | ### 6.3 PMIC 相关事件及行为 @@ -1120,7 +1120,7 @@ PMIC 支持以下关机触发条件： ### 6.5 看门狗 -在开机模式和睡眠模式下，主机可通过 IIC 通信接口使能看门狗并配置超时时间（表 7-72 WDT_CTRL[2:1]）。 +在开机模式和睡眠模式下，主机可通过 I²C 通信接口使能看门狗并配置超时时间（表 7-72 WDT_CTRL[2:1]）。 如果在设定超时时间内主机未进行喂狗操作（表 7-72 WDT_CTRL[0]=1），则产生看门狗超时事件并置起相关标志位（表 7-108 EVENT1[3]）。 @@ -1143,11 +1143,11 @@ GPIOx_ODR 复用两种功能： 1. 作为 GPIO 输出时（GPIOx_MODE=2’b01），GPIOx_ODR 即为 GPIO 输出状态。 2. 作为复用功能时（GPIOx_MODE=2’b1x），GPIOx_ODR 即为相关复用功能的有效状态配置位。 -### 6.7 IIC 通信接口 +### 6.7 I²C 通信接口 -PMIC 的通信接口为 IIC，最大支持速度为 1MHz，此 PMIC 只作为从机使用。 +PMIC 的通信接口为 I²C，最大支持速度为 1MHz，此 PMIC 只作为从机使用。 -在关机模式下 SCL 和 SDA 接口不工作，只有进入开机模式和睡眠模式后主机才能通过 IIC 接口操作 PMIC 寄存器。该 IIC 从机地址可通过 MTP 配置：表 7-125 SYS_CFG0[6:0]。 +在关机模式下 SCL 和 SDA 接口不工作，只有进入开机模式和睡眠模式后主机才能通过 I²C 接口操作 PMIC 寄存器。该 I²C 从机地址可通过 MTP 配置：表 7-125 SYS_CFG0[6:0]。 ### 6.8 LDO @@ -1167,7 +1167,7 @@ PMIC 内部集成了三种 LDO：AONLDO、ALDO1～4 和 DLDO1～7，其相关控 - 在 VSYS 上电（VSYS \> 2.7 V）后保持常开。 - 无睡眠电压设置。 - ALDO1～4 和 DLDO1～7 - - 使能和电压调节可通过软件修改（主机通过 IIC 访问 PMIC 内部寄存器）。 + - 使能和电压调节可通过软件修改（主机通过 I²C 访问 PMIC 内部寄存器）。 - 所有 LDO 的电压调节步幅为 25 mV。 - 支持两种电压配置：开机模式和睡眠模式下的电压。 - 硬件控制 @@ -1259,7 +1259,7 @@ VSYS 过压保护，芯片过温保护和 Switch 短路保护分别有单独的 表 6-9 过温保护档位及其行为 -| 表 7-125 SYS_CFG0[7] | 温度报警（warning）/ ℃ | 严重过温（severe）/ ℃ | 关机过温（critical）/ ℃ | +| 表 7-125 SYS_CFG0[7] | 温度报警（warning）/ °C | 严重过温（severe）/ °C | 关机过温（critical）/ °C | |----------------------|------------------------|------------------------|--------------------------| | 0 | 95 | 115 | 135 | | 1 | 110 | 130 | 150 | @@ -2764,7 +2764,7 @@ TICK 的产生是周期性的，触发后可配置成 1s 或 1min（表 7-33 RTC | Addr | Bits | Field Name | Attr | Default | Description | |------|--------|--------------------------|-------|---------|-------------| | 0x9E | 7 | VSYS_OVP_EN | RWE | 0x0 | VSYS过压（5.9V）关机保护使能
`0`：禁止
`1`：使能 | -| | 6 | TEMP_CRIT_PROT | RWE | 0x0 | 过温（135℃/150℃）关机保护使能
`0`：禁止
`1`：使能 | +| | 6 | TEMP_CRIT_PROT | RWE | 0x0 | 过温（135°C/150°C）关机保护使能
`0`：禁止
`1`：使能 | | | 5 | IRQ_EN_VSYS_OV | RW | 0x0 | VSYS过压事件中断使能
`0`：禁止
`1`：使能 | | | 4 | IRQ_EN_PWRKY_SDINTR | RW | 0x0 | E_PWRKY_SDINTR事件中断使能
`0`：禁止
`1`：使能 | | | 3 | IRQ_EN_PWRKY_LINTR | RW | 0x0 | E_PWRKY_LINTR事件中断使能
`0`：禁止
`1`：使能 | @@ -2807,8 +2807,8 @@ TICK 的产生是周期性的，触发后可配置成 1s 或 1min（表 7-33 RTC | Addr | Bits | Field Name | Attr | Default | Description | |------|--------|--------------|------|---------|-------------| -| 0xA3 | 7 | TEMP_LEVEL | RE | 0x0 | 温度档位选择
温度报警（warn） 严重过温（severe） 关机过温（critical）
`0`： 95 ℃ 115 ℃ 135℃
`1`： 110 ℃ 130 ℃ 150℃ | -| | 6:0 | IF_ADDR | RE | 0x55 | IIC从机地址配置 | +| 0xA3 | 7 | TEMP_LEVEL | RE | 0x0 | 温度档位选择
温度报警（warn） 严重过温（severe） 关机过温（critical）
`0`： 95 °C 115 °C 135°C
`1`： 110 °C 130 °C 150°C | +| | 6:0 | IF_ADDR | RE | 0x55 | I²C从机地址配置 | ##### 表 7-126 SYS_CFG1 diff --git a/zh/power_stone/p1s/p1s_docs/p1s_ds.md b/zh/power_stone/p1s/p1s_docs/p1s_ds.md index 50fbf17..055a6b6 100644 --- a/zh/power_stone/p1s/p1s_docs/p1s_ds.md +++ b/zh/power_stone/p1s/p1s_docs/p1s_ds.md @@ -41,13 +41,13 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， - 4 个低噪声 LDO - 输出电压：0.5V～3.4V，25mV/step - 输出电流：0.3A -- IIC 通信接口 +- I²C 通信接口 - 用户可编程 MTP - 带有看门狗定时器的系统监视器 - 12 位 ADC，具有 8 个通道和可配置的警报阈值 - 输出电压和启动/关闭顺序可由 MTP 预设 - 6 个用于外围控制的 GPIO 引脚 -- 芯片结温：- 40℃ 至 125℃ +- 芯片结温：- 40°C 至 125°C - 封装：QFN-60，7x7mm，0.4mm 间距 ### 1.3 应用 @@ -126,8 +126,8 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 41 | VSYS | PWR | 内部电路电源输入 | | | 42 | GPIO5 | DIO/AIN | 多功能复用GPIO | EXT_EN/SLEEP_WKUP/PWRCTRL/nRESET/ADC input | | 43 | GPIO4 | DIO/AIN | 多功能复用GPIO | EXT_EN/SLEEP_WKUP/PWRCTRL/nRESET/ADC input | -| 44 | SDA | DIO | IIC通信接口数据信号 | | -| 45 | SCL | DIN | IIC通信接口时钟信号 | | +| 44 | SDA | DIO | I²C通信接口数据信号 | | +| 45 | SCL | DIN | I²C通信接口时钟信号 | | | 46 | NC | / | NA | | | 47 | NC | / | NA | | | 48 | NC | / | NA | | @@ -164,12 +164,12 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| T(J) | 结温 | | -40 | | 125 | ℃ | +| T(J) | 结温 | | -40 | | 125 | °C | | V(SYS) | 系统供电电压 | | 2.7 | | 5.5 | V | | P(DIS) | 芯片最大功耗 | | | | 2 | W | -| R(JA) | Junction到环境热阻 | | | 38 | | ℃/W | -| R(JC) | Junction到芯片表面热阻 | | | 12 | | ℃/W | -| R(JB) | Junction到PCB板热阻 | | | 9 | | ℃/W | +| R(JA) | Junction到环境热阻 | | | 38 | | °C/W | +| R(JC) | Junction到芯片表面热阻 | | | 12 | | °C/W | +| R(JB) | Junction到PCB板热阻 | | | 9 | | °C/W | ### 5.2 各模式功耗情况 @@ -178,8 +178,8 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | | 功耗 | RESET模式 | - | | | | μA | -| 功耗 | RTC模式 | Vin=5V, Ta=25℃ | | 1.5 | | μA | -| 功耗 | 关机模式-SHUTDOWN | Vin=5V, Ta=25℃ | | 35 | | μA | +| 功耗 | RTC模式 | Vin=5V, Ta=25°C | | 1.5 | | μA | +| 功耗 | 关机模式-SHUTDOWN | Vin=5V, Ta=25°C | | 35 | | μA | | 功耗 | 开机模式-ACTIVE | - | | | | μA | | 功耗 | 睡眠模式-SLEEP | - | | | | μA | @@ -189,12 +189,12 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| V(IH) | 高电平输入 | 2.7 ～ 5.5 V，-40 ~ 105 ℃ | | | 0.3 * AONLDO | V | -| V(IL) | 低电平输入 | 2.7 ～ 5.5 V，-40 ~ 105 ℃ | 0.7 * AONLDO | | | V | -| V(OH) | 高电平输出 | 5 V，25 ℃, AONLDO = 1.8 V，I(LOAD)=1 mA | | AONLDO - 0.1 | | V | -| V(OL) | 低电平输出 | 5V，25 ℃, AONLDO = 1.8 V，I(LOAD)=1 mA | | 0.1 | | V | -| I(DRIVE) | 源电流驱动 | 5V，25 ℃, AONLDO = 1.8 V，PAD = 1.3 V | | 10 | | mA | -| I(SINK) | 灌电流驱动 | 5V，25 ℃, AONLDO = 1.8 V，PAD = 0.5 V | | 25 | | mA | +| V(IH) | 高电平输入 | 2.7 ～ 5.5 V，-40 ~ 105 °C | | | 0.3 * AONLDO | V | +| V(IL) | 低电平输入 | 2.7 ～ 5.5 V，-40 ~ 105 °C | 0.7 * AONLDO | | | V | +| V(OH) | 高电平输出 | 5 V，25 °C, AONLDO = 1.8 V，I(LOAD)=1 mA | | AONLDO - 0.1 | | V | +| V(OL) | 低电平输出 | 5V，25 °C, AONLDO = 1.8 V，I(LOAD)=1 mA | | 0.1 | | V | +| I(DRIVE) | 源电流驱动 | 5V，25 °C, AONLDO = 1.8 V，PAD = 1.3 V | | 10 | | mA | +| I(SINK) | 灌电流驱动 | 5V，25 °C, AONLDO = 1.8 V，PAD = 0.5 V | | 25 | | mA | | R(PU) | 弱上拉电阻 | | | 20 k | | Ω | | R(PD) | 弱下拉电阻 | | | 20 k | | Ω | @@ -332,20 +332,20 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | --- | --- | --- | --- | --- | --- | --- | | Resolution | 分辨率 | | | 12 | | Bits | | VDD | 供电电压 | | 2.7 | | 5.5 | V | -| DNL | 微分非线性 | 2.7 ~ 5.5 V -40 ~ 105 ℃ | -3 | | 3 | LSB | -| INL | 积分非线性 | 2.7 ~ 5.5 V -40 ~ 105 ℃ | -4 | | 4 | LSB | -| Offset error | 偏移误差 | 2.7 ~ 5.5 V -40 ~ 105 ℃ | -4 | | 4 | LSB | -| Gain error | 增益误差 | 2.7 ~ 5.5 V -40 ~ 105 ℃ | -4 | | 4 | LSB | -| Sample rate | 采样率 | 25 ℃ | 0.1 | | 25 | Ksps | -| I(WORK) | 工作电流 | 5V，25 ℃ | | 190 | | μA | +| DNL | 微分非线性 | 2.7 ~ 5.5 V -40 ~ 105 °C | -3 | | 3 | LSB | +| INL | 积分非线性 | 2.7 ~ 5.5 V -40 ~ 105 °C | -4 | | 4 | LSB | +| Offset error | 偏移误差 | 2.7 ~ 5.5 V -40 ~ 105 °C | -4 | | 4 | LSB | +| Gain error | 增益误差 | 2.7 ~ 5.5 V -40 ~ 105 °C | -4 | | 4 | LSB | +| Sample rate | 采样率 | 25 °C | 0.1 | | 25 | Ksps | +| I(WORK) | 工作电流 | 5V，25 °C | | 190 | | μA | 表 5-12 ADC 内部基准电气特性 | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| V(REF_2V) | 2V基准电压 | 2.7 ~ 5.5 V，25 ℃ | 1.995 | 2 | 2.005 | V | -| V(REF_3V) | 3V基准电压 | 3.5 ~ 5.5 V，25 ℃ | 2.995 | 3 | 3.005 | V | -| I(WORK) | 工作电流 | 5.0V，-40 ~ 105 ℃ | | 400 | | μA | +| V(REF_2V) | 2V基准电压 | 2.7 ~ 5.5 V，25 °C | 1.995 | 2 | 2.005 | V | +| V(REF_3V) | 3V基准电压 | 3.5 ~ 5.5 V，25 °C | 2.995 | 3 | 3.005 | V | +| I(WORK) | 工作电流 | 5.0V，-40 ~ 105 °C | | 400 | | μA | ### 5.9 内部时钟 @@ -353,19 +353,19 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| F(ACC) | 频率精度 | 5 V，25 ℃ | 30 | 32 | 34 | kHz | -| V(C) | 电压系数 | 2.0 ~ 5.5 V，25 ℃ | -7 | | 7 | % | -| T(C) | 温度系数 | 5V，-40 ~ 105 ℃ | -10 | | 10 | % | -| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 ℃ | 0.4 | 0.9 | 1.5 | μA | +| F(ACC) | 频率精度 | 5 V，25 °C | 30 | 32 | 34 | kHz | +| V(C) | 电压系数 | 2.0 ~ 5.5 V，25 °C | -7 | | 7 | % | +| T(C) | 温度系数 | 5V，-40 ~ 105 °C | -10 | | 10 | % | +| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 °C | 0.4 | 0.9 | 1.5 | μA | 表 5-14 内部 HSI 电气特性 | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| F(ACC) | 频率精度 | 5 V，25 ℃ | 1.98 | 2 | 2.02 | MHz | -| V(C) | 电压系数 | 2.0 ~ 5.5 V，25 ℃ | -0.5 | | 0.5 | % | -| T(C) | 温度系数 | 5V，-40 ~ 105 ℃ | -3 | | 3 | % | -| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 ℃ | 45 | 80 | 120 | μA | +| F(ACC) | 频率精度 | 5 V，25 °C | 1.98 | 2 | 2.02 | MHz | +| V(C) | 电压系数 | 2.0 ~ 5.5 V，25 °C | -0.5 | | 0.5 | % | +| T(C) | 温度系数 | 5V，-40 ~ 105 °C | -3 | | 3 | % | +| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 °C | 45 | 80 | 120 | μA | ### 5.10 32 kHz 晶振 @@ -373,9 +373,9 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| C(LOAD) | 外挂负载电容 | 2.7 ~ 5.5 V，-40 ~ 105 ℃ | 7 | 22.5 | 30 | pF | -| I(WORK) | 工作电流 | 5 V，25 ℃，C(LOAD) = 12.5 pF | | 1 | | μA | -| T(SETUP) | 起振时间 | 5 V，25 ℃ | | 0.6 | | s | +| C(LOAD) | 外挂负载电容 | 2.7 ~ 5.5 V，-40 ~ 105 °C | 7 | 22.5 | 30 | pF | +| I(WORK) | 工作电流 | 5 V，25 °C，C(LOAD) = 12.5 pF | | 1 | | μA | +| T(SETUP) | 起振时间 | 5 V，25 °C | | 0.6 | | s | ### 5.11 POR/PDR @@ -383,10 +383,10 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| POR | 上电复位电压 | -40 ~ 105 ℃ | 1.75 | 2.0 | 2.25 | V | -| PDR | 掉电复位电压 | -40 ~ 105 ℃ | 1.75 | 2.0 | 2.25 | V | -| T(FILTER) | POR脉冲干扰滤波长度 | 25 ℃，3 V ~ 1.5 V | | 2.0 | | us | -| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 ℃ | 0.1 | 0.3 | 1 | μA | +| POR | 上电复位电压 | -40 ~ 105 °C | 1.75 | 2.0 | 2.25 | V | +| PDR | 掉电复位电压 | -40 ~ 105 °C | 1.75 | 2.0 | 2.25 | V | +| T(FILTER) | POR脉冲干扰滤波长度 | 25 °C，3 V ~ 1.5 V | | 2.0 | | us | +| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 °C | 0.1 | 0.3 | 1 | μA | ### 5.12 RTC 模块 POR/PDR @@ -394,13 +394,13 @@ SpacemiT® Power Stone™ P1S 是一款多通道电源管理芯片（PMIC）， | 参数 | 描述 | 条件 | 最小值 | 典型值 | 最大值 | 单位 | | --- | --- | --- | --- | --- | --- | --- | -| POR | 上电复位电压 | -40 ~ 105 ℃ | 1.55 | 1.7 | 1.85 | V | -| PDR | 掉电复位电压 | -40 ~ 105 ℃ | 1.55 | 1.7 | 1.85 | V | -| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 ℃ | 0.1 | 0.3 | 1 | μA | +| POR | 上电复位电压 | -40 ~ 105 °C | 1.55 | 1.7 | 1.85 | V | +| PDR | 掉电复位电压 | -40 ~ 105 °C | 1.55 | 1.7 | 1.85 | V | +| I(WORK) | 工作电流 | 2.0 ~ 5.5 V，-40 ~ 105 °C | 0.1 | 0.3 | 1 | μA | ## 6. 功能描述 -P1S 是一款低压多通道电源管理芯片（PMIC），内部集成 6 路快速瞬态响应 BUCK，12 路低噪声 LDO；同时内部集成 MTP，可根据不同使用场景，灵活定制各路输出默认电压和开关机时序，以满足不同 SoC 平台对电源时序的要求。 +P1S 是一款低压多通道电源管理芯片（PMIC），内部集成 6 路快速瞬态响应 BUCK，5 路低噪声 LDO；同时内部集成 MTP，可根据不同使用场景，灵活定制各路输出默认电压和开关机时序，以满足不同 SoC 平台对电源时序的要求。 ### 6.1 电源管理引脚 @@ -625,7 +625,7 @@ OUT\_32K 引脚可输出内部慢时钟或者晶振时钟，寄存器可配置 | VSYS | DIGITAL | - | - | x | x | x | x | | AONLDO | GPIO | - | - | - | - | x | x | | AONLDO | INT | - | - | - | - | x | x | -| AONLDO | IIC | - | - | - | - | x | x | +| AONLDO | I²C | - | - | - | - | x | x | ### 6.3 PMIC 相关事件及行为 @@ -849,7 +849,7 @@ PMIC 进入开机模式开始，如果 VSYS 电压在 16s 内未低于关机阈 ### 6.5 看门狗 -在开机模式和睡眠模式下，主机可通过 IIC 通信接口使能看门狗并配置超时时间（**表 7-72**WDT\_CTRL[2:1]）。 +在开机模式和睡眠模式下，主机可通过 I²C 通信接口使能看门狗并配置超时时间（**表 7-72**WDT\_CTRL[2:1]）。 如果在设定超时时间内主机未进行喂狗操作（**表 7-72**WDT\_CTRL[0]=1），则产生看门狗超时事件并置起相关标志位（**表 7-108**EVENT1[3]）。 @@ -872,11 +872,11 @@ GPIOx\_ODR 复用两种功能： 1. 作为 GPIO 输出时（GPIOx\_MODE=2’b01），GPIOx\_ODR 即为 GPIO 输出状态。 2. 作为复用功能时（GPIOx\_MODE=2’b1x），GPIOx\_ODR 即为相关复用功能的有效状态配置位。 -### 6.7 IIC 通信接口 +### 6.7 I²C 通信接口 -PMIC 的通信接口为 IIC，最大支持速度为 1MHz，此 PMIC 只作为从机使用。 +PMIC 的通信接口为 I²C，最大支持速度为 1MHz，此 PMIC 只作为从机使用。 -在关机模式下 SCL 和 SDA 接口不工作，只有进入开机模式和睡眠模式后主机才能通过 IIC 接口操作 PMIC 寄存器。该 IIC 从机地址可通过 MTP 配置：**表 7-125**SYS\_CFG0[6:0]。 +在关机模式下 SCL 和 SDA 接口不工作，只有进入开机模式和睡眠模式后主机才能通过 I²C 接口操作 PMIC 寄存器。该 I²C 从机地址可通过 MTP 配置：**表 7-125**SYS\_CFG0[6:0]。 ### 6.8 LDO @@ -890,7 +890,7 @@ PMIC 内部集成了三种 LDO：AONLDO，ALDO1~4 和 DLDO1~7，其相关控制 | ALDO1~4 | x | x | x | - | 25 mV | x | | DLDO1~7 | x | x | x | - | 25 mV | x | -所有 LDO 的使能（除了 AONLDO）和电压调节都可通过软件修改，即主机通过 IIC 访问 PMIC 内部寄存器。AONLDO 在 VSYS 上电（VSYS \> 2.7 V）后即保持常开，AONLDO 无睡眠电压可设置，其余 LDO 则有，并且所有 LDO 电压调节的步幅均为 25 mV。 +所有 LDO 的使能（除了 AONLDO）和电压调节都可通过软件修改，即主机通过 I²C 访问 PMIC 内部寄存器。AONLDO 在 VSYS 上电（VSYS \> 2.7 V）后即保持常开，AONLDO 无睡眠电压可设置，其余 LDO 则有，并且所有 LDO 电压调节的步幅均为 25 mV。 ALDO1~4 和 DLDO1~7 也可以受硬件控制： @@ -962,7 +962,7 @@ VSYS 过压保护，芯片过温保护和 Switch 短路保护分别有单独的 **表 6-9 过温保护档位及其行为** -| 表 7125 SYS_CFG0[7] | 温度报警（warning）/ ℃ | 严重过温（severe）/ ℃ | 关机过温（critical）/ ℃ | +| 表 7125 SYS_CFG0[7] | 温度报警（warning）/ °C | 严重过温（severe）/ °C | 关机过温（critical）/ °C | | --- | --- | --- | --- | | 0 | 95 | 115 | 135 | | 1 | 110 | 130 | 150 | @@ -2321,7 +2321,7 @@ TICK 的产生是周期性的，触发后可配置成 1s 或 1min（**表 7-33** | Addr | Bits | Field Name | Attr | Default | Description | | --- | --- | --- | --- | --- | --- | | 0x9E | 7 | VSYS_OVP_EN | RWE | 0x0 | VSYS过压（5.9V）关机保护使能 0：禁止 1：使能 | -| 0x9E | 6 | TEMP_CRIT_PROT | RWE | 0x0 | 过温（135℃/150℃）关机保护使能 0：禁止 1：使能 | +| 0x9E | 6 | TEMP_CRIT_PROT | RWE | 0x0 | 过温（135°C/150°C）关机保护使能 0：禁止 1：使能 | | 0x9E | 5 | IRQ_EN_VSYS_OV | RW | 0x0 | VSYS过压事件中断使能 0：禁止 1：使能 | | 0x9E | 4 | IRQ_EN_PWRKY_SDINTR | RW | 0x0 | E_PWRKY_SDINTR事件中断使能 0：禁止 1：使能 | | 0x9E | 3 | IRQ_EN_PWRKY_LINTR | RW | 0x0 | E_PWRKY_LINTR事件中断使能 0：禁止 1：使能 | @@ -2364,8 +2364,8 @@ TICK 的产生是周期性的，触发后可配置成 1s 或 1min（**表 7-33** | Addr | Bits | Field Name | Attr | Default | Description | | --- | --- | --- | --- | --- | --- | -| 0xA3 | 7 | TEMP_LEVEL | RE | 0x0 | 温度档位选择 温度报警（warn） 严重过温（severe） 关机过温（critical） 0： 95 ℃ 115 ℃ 135℃ 1： 110 ℃ 130 ℃ 150℃ | -| 0xA3 | 6:0 | IF_ADDR | RE | 0x55 | IIC从机地址配置 | +| 0xA3 | 7 | TEMP_LEVEL | RE | 0x0 | 温度档位选择 温度报警（warn） 严重过温（severe） 关机过温（critical） 0： 95 °C 115 °C 135°C 1： 110 °C 130 °C 150°C | +| 0xA3 | 6:0 | IF_ADDR | RE | 0x55 | I²C从机地址配置 | 表 7-126 SYS\_CFG1 diff --git a/zh/power_stone/p1s/p1s_docs/root_overview.md b/zh/power_stone/p1s/p1s_docs/root_overview.md index 5617fc2..94223bf 100644 --- a/zh/power_stone/p1s/p1s_docs/root_overview.md +++ b/zh/power_stone/p1s/p1s_docs/root_overview.md @@ -23,7 +23,7 @@ P1S 仅需极少数量的外部元件，并提供紧凑的 QFN-60（7mm x 7mm） ## 特性 - **输入电压** - - 2.6 V ~ 5.5 V + - 2.7 V ~ 5.5 V - **6 个高效降压转换器** - Buck1/2: 0.5V ~ 3.4V, 4A , 支持双相操作 @@ -40,7 +40,7 @@ P1S 仅需极少数量的外部元件，并提供紧凑的 QFN-60（7mm x 7mm） - 输出电压：0.5V ~ 3.4V, 25mV/step - 输出电流：0.3A -- **IIC 通信接口** +- **I²C 通信接口** - **输出电压和启动/关闭顺序可由 MTP 预设** @@ -50,7 +50,7 @@ P1S 仅需极少数量的外部元件，并提供紧凑的 QFN-60（7mm x 7mm） - **6 个多功能复用 GPIO** -- **芯片结温：-40℃ ~ 125℃** +- **芯片结温：-40°C ~ 125°C** - **封装：QFN-60，7mm x 7mm，0.4mm 间距** diff --git a/zh/power_stone/p3/p3_docs/p3_ds.md b/zh/power_stone/p3/p3_docs/p3_ds.md index 5cbe76f..34bc38d 100644 --- a/zh/power_stone/p3/p3_docs/p3_ds.md +++ b/zh/power_stone/p3/p3_docs/p3_ds.md @@ -117,8 +117,8 @@ P3 引脚描述 |参数|描述|条件|最小值|典型值|最大值|单位| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|TSTG|存储温度|-|- 40|-|150|℃| -|TJ|结温|-|-40|-|125|℃| +|TSTG|存储温度|-|- 40|-|150|°C| +|TJ|结温|-|-40|-|125|°C| |VSYS|系统供电电压|-|-0.3|-|5.8|V| |VESD_HBM|ESD保护-HBM|-|2|-|-|kV| |VESD_CDM|ESD保护-CDM|-|500|-|-|V| @@ -127,19 +127,19 @@ P3 引脚描述 |参数|描述|条件|最小值|典型值|最大值|单位| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|TJ|结温|-|-|-|85|℃| +|TJ|结温|-|-|-|85|°C| |VSYS|系统供电电压|-|3.3|5.0|5.5|V| |PDIS|芯片最大功耗|-|-|-|2|W| -|RJA|Junction到环境热阻|-|-|31|-|℃/W| -|RJC|Junction到芯片表面热阻|-|-|-|-|℃/W| -|RJB|Junction到PCB板热阻|-|-|-|-|℃/W| +|RJA|Junction到环境热阻|-|-|31|-|°C/W| +|RJC|Junction到芯片表面热阻|-|-|-|-|°C/W| +|RJB|Junction到PCB板热阻|-|-|-|-|°C/W| |ISHDN|关机模式电流|CE = 0|-|17|-|μA| ### 4.3 数字引脚电气特性 #### Top-Level Electrical Characteristics -(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 ℃; typical values are at VSYS = 5 V, TJ = +25 ℃) +(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 °C; typical values are at VSYS = 5 V, TJ = +25 °C) **LOGIC AND CONTROL INPUTS** @@ -170,7 +170,7 @@ P3 引脚描述 **I2C Electrical Characteristics** -(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 ℃; typical values are at VSYS = 5 V, TJ = +25 ℃) +(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 °C; typical values are at VSYS = 5 V, TJ = +25 °C) **POWER SUPPLY** @@ -218,7 +218,7 @@ P3 引脚描述 #### SPI Electrical Characteristics -(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 ℃; typical values are at VSYS = 5 V, TJ = +25 ℃) +(VSYS = +2.5 ~ +5.5 V, VVIO1 = +1.8 V, VVIO2 = +1.8 V, TJ = -40 ~ 105 °C; typical values are at VSYS = 5 V, TJ = +25 °C) **POWER SUPPLY AND I/O STAGES** @@ -270,8 +270,8 @@ BUCK1~4电气特性 |Soft on / off Slow|软启动/关闭时间|SOFT_STA_SLEW / SOFT_STP_SLEW|-|10|-|mV/μs| |Soft on / off Slow|软启动/关闭时间|SOFT_STA_SLEW / SOFT_STP_SLEW|-|25|-|mV/μs| |Soft on / off Slow|软启动/关闭时间|SOFT_STA_SLEW / SOFT_STP_SLEW|-|50|-|mV/μs| -|VBUCK_ACC|输出电压精度|VOUT > 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 ℃|-|-|±1|%| -|VBUCK_ACC|输出电压精度|VOUT < 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 ℃|-|-|±8|mV| +|VBUCK_ACC|输出电压精度|VOUT > 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 °C|-|-|±1|%| +|VBUCK_ACC|输出电压精度|VOUT < 0.8 V, VIN = 4 V,
IOUT = 1 A, TA = 25 °C|-|-|±8|mV| |Load Regulation|负载调整率|IOUT = 0.1 ~ 8 A, VOUT > 0.8 V, CCM|-|-|±1|%| |Load Regulation|负载调整率|IOUT = 0.1 ~ 8 A, VOUT < 0.8 V, CCM|-|-|±8|mV| |Line Regulation|线性调整率|VIN = 3.0 ~ 5.5 V, VOUT > 0.8 V, CCM|-|-|±1|%| @@ -293,8 +293,8 @@ BUCK1~4电气特性 |OV||VOUT/VOUT_target - 1|-|12.5|-|%| |UV||VOUT/VOUT_target - 1||-10.0|-|%| |Power Down resistor||-|-|120|-|Ω| -|SWx Leakage Current|SW脚漏电|CE = 0, VLXx = 0 or 5.5 V, 25 ℃|-0.3|-|0.3|uA| -|SWx Leakage Current|SW脚漏电|CE = 0, VLXx = 0 or 5.5 V, 85 ℃|-3|-|3|-| +|SWx Leakage Current|SW脚漏电|CE = 0, VLXx = 0 or 5.5 V, 25 °C|-0.3|-|0.3|uA| +|SWx Leakage Current|SW脚漏电|CE = 0, VLXx = 0 or 5.5 V, 85 °C|-3|-|3|-| |Efficiency|效率|VIN = 4 V, VOUT = 0.9 V
IOUT = 1 A/Phase|-|90|-|%| |Efficiency|效率|VIN = 4 V, VOUT = 0.9 V
IOUT = 6.0 A/Phase|-|80|-|-| |Efficiency|效率|VIN = 4 V, VOUT = 0.9 V
IOUT = 8.0 A/Phase|-|77|-|-| @@ -307,22 +307,22 @@ ADC电气特性 |:---:|:---:|:---:|:---:|:---:|:---:|:---:| |Resolution|分辨率|-|-|-|12|Bits| |VDD|供电电压|-|2.5|-|5.5|V| -|DNL|微分非线性|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±3|-|LSB| -|INL|积分非线性|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±3|-|LSB| -|Offset error|偏移误差|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±5|-|LSB| -|Gain error|增益误差|VDD = 4.25 V, T = 25 ℃, Freq = 1 MHz|-|±5|-|LSB| -|Sample rate|采样率|T = 25 ℃, Freq = 1 MHz|-|76|-|Ksps| -|IWORK|工作电流|T = 25 ℃, Freq = 0.5 MHz|-|180|-|μA| +|DNL|微分非线性|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±3|-|LSB| +|INL|积分非线性|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±3|-|LSB| +|Offset error|偏移误差|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±5|-|LSB| +|Gain error|增益误差|VDD = 4.25 V, T = 25 °C, Freq = 1 MHz|-|±5|-|LSB| +|Sample rate|采样率|T = 25 °C, Freq = 1 MHz|-|76|-|Ksps| +|IWORK|工作电流|T = 25 °C, Freq = 0.5 MHz|-|180|-|μA| ADC内部基准电气特性 |参数|描述|条件|最小值|典型值|最大值|单位| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|VREF_2V|2V基准电压|VDD = 4.25 V, T = 25 ℃|2.046|2.048|2.050|V| -|VREF_3V|3V基准电压|VDD = 4.25 V, T = 25 ℃|3.070|3.072|3.074|V| -|VC|电压系数|VDD = 4.25 V, T = 25 ℃|-|-|-|%| +|VREF_2V|2V基准电压|VDD = 4.25 V, T = 25 °C|2.046|2.048|2.050|V| +|VREF_3V|3V基准电压|VDD = 4.25 V, T = 25 °C|3.070|3.072|3.074|V| +|VC|电压系数|VDD = 4.25 V, T = 25 °C|-|-|-|%| |TC|温度系数|VDD = 4.25 V|-|-|-|%| -|IWORK|工作电流|VDD = 4.25 V, T = 25 ℃|-|200|-|μA| +|IWORK|工作电流|VDD = 4.25 V, T = 25 °C|-|200|-|μA| ### 4.7 时钟 @@ -330,19 +330,19 @@ ADC内部基准电气特性 |参数|描述|条件|最小值|典型值|最大值|单位| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|FACC|频率精度|5 V, 25 ℃|-|64|-|kHz| -|VC|电压系数|2.7 ~ 5.5 V, 25 ℃|-|-|-|%| -|TC|温度系数|5 V, -40 ~ 105 ℃|-|-|-|%| -|IWORK|工作电流|2.7 ~ 5.5 V, -40 ~ 105 ℃|-|-|-|μA| +|FACC|频率精度|5 V, 25 °C|-|64|-|kHz| +|VC|电压系数|2.7 ~ 5.5 V, 25 °C|-|-|-|%| +|TC|温度系数|5 V, -40 ~ 105 °C|-|-|-|%| +|IWORK|工作电流|2.7 ~ 5.5 V, -40 ~ 105 °C|-|-|-|μA| 内部HSI电气特性 |参数|描述|条件|最小值|典型值|最大值|单位| |:---:|:---:|:---:|:---:|:---:|:---:|:---:| -|FACC|频率精度|5 V, 25 ℃|-|8|-|MHz| -|VC|电压系数|2.7 ~ 5.5 V, 25 ℃|-|-|-|%| -|TC|温度系数|5 V, -40 ~ 105 ℃|-|-|-|%| -|IWORK|工作电流|2.0 ~ 5.5 V, -40 ~ 105 ℃|-|-|-|μA| +|FACC|频率精度|5 V, 25 °C|-|8|-|MHz| +|VC|电压系数|2.7 ~ 5.5 V, 25 °C|-|-|-|%| +|TC|温度系数|5 V, -40 ~ 105 °C|-|-|-|%| +|IWORK|工作电流|2.0 ~ 5.5 V, -40 ~ 105 °C|-|-|-|μA| ### 4.8 POR/PDR @@ -1277,7 +1277,7 @@ VSYS过压，VIO欠压，芯片温度保护分别有单独的使能位： **表 5-25 过温保护档位及其行为** -|[表 6-42](#表-6-42-prot_cfg) PROT_CFG[6]|温度报警（warning）/ ℃|严重过温（severe）/ ℃|关机过温（critical）/ ℃| +|[表 6-42](#表-6-42-prot_cfg) PROT_CFG[6]|温度报警（warning）/ °C|严重过温（severe）/ °C|关机过温（critical）/ °C| |:---:|:---:|:---:|:---:| |0|95|115|135| |1|110|130|150| @@ -2147,7 +2147,7 @@ PMIC 的中断事件如 [表 5-27](#table-5-27) 所示。当某个中断事件 |Address|Bits|Name|Attr|Default|Description| |---|---|---|---|---|---| |0x4C|7|Reserved|RV|0|Reserved| -||6|TEMP_LEVEL1|RE|0x0|温度档位选择：
0：温度报警（warn）95 ℃ / 严重过温（severe）115 ℃ / 关机过温（critical）135 ℃
1：温度报警（warn）110 ℃ / 严重过温（severe）130 ℃ / 关机过温（critical）150 ℃| +||6|TEMP_LEVEL1|RE|0x0|温度档位选择：
0：温度报警（warn）95 °C / 严重过温（severe）115 °C / 关机过温（critical）135 °C
1：温度报警（warn）110 °C / 严重过温（severe）130 °C / 关机过温（critical）150 °C| ||5:3|VSYS_RDY_VTH1|RE|0x0|开机阈值
000：VSYS>2.9V，启动开机流程
001：VSYS>3.0V，启动开机流程
010：VSYS>3.1V，启动开机流程
011：VSYS>3.2V，启动开机流程
100：VSYS>3.3V，启动开机流程
101：VSYS>3.4V，启动开机流程
110：VSYS>3.5V，启动开机流程
111：VSYS>3.6V，启动开机流程| ||2:0|VSYS_SHUT_VTH1|RE|0x0|关机阈值
000：VSYS<2.6V，启动关机流程
001：VSYS<2.7V，启动关机流程
010：VSYS<2.8V，启动关机流程
011：VSYS<2.9V，启动关机流程
100：VSYS<3.0V，启动关机流程
101：VSYS<3.1V，启动关机流程
110：VSYS<3.2V，启动关机流程
111：VSYS<3.3V，启动关机流程| @@ -2160,8 +2160,8 @@ PMIC 的中断事件如 [表 5-27](#table-5-27) 所示。当某个中断事件 |0x4D|7|Reserved|RV|0|Reserved| ||6|VSYS_OV_PROT_EN1|RWE|0x0|VSYS过压（5.9V）关机保护使能
0：禁止
1：使能| ||5|VIO_UV_PROT_EN1|RWE|0x0|VIO欠压关机保护使能
0：禁止
1：使能| -||4|TEMP_CRIT_PROT_EN1|RWE|0x0|关机过温（135℃/150℃）关机保护使能
0：禁止
1：使能| -||3|TEMP_SEVERE_PROT_EN1|RWE|0x0|严重过温（115℃/130℃）关机保护使能
0：禁止
1：使能| +||4|TEMP_CRIT_PROT_EN1|RWE|0x0|关机过温（135°C/150°C）关机保护使能
0：禁止
1：使能| +||3|TEMP_SEVERE_PROT_EN1|RWE|0x0|严重过温（115°C/130°C）关机保护使能
0：禁止
1：使能| ||2|BUCK_OV_PROT_EN1|RWE|0x0|任一BUCK输出过压保护（进行关机保护）
0： 禁止保护
1： 使能保护| ||1|BUCK_UV_PROT_EN1|RWE|0x0|任一BUCK输出欠压保护（进行关机保护）
0： 禁止保护
1： 使能保护| ||0|Reserved|RV|0|Reserved|